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IEEE Transactions on Electron Devices : Impact Factor & More
eISSN: 1557-9646pISSN: 0018-9383
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IEEE Transactions on Electron Devices Key Metrics
CiteScore 
5.3
SNIP
1.36
Topics Covered on IEEE Transactions on Electron Devices
Heterojunction
Breakdown voltage
Oxide
MOSFET
Simulation
CMOS
Contact resistance
Surface roughness
Photodiode
Broadband
Gate dielectric
Low voltage
Experimental data
Resistive switching
Irradiation
Biosensor
Threshold voltage
Electron mobility
Room temperature
Flash memory
IEEE Transactions on Electron Devices Journal Specifications
| Overview | |
| Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Language | English |
| Frequency | Monthly |
| General Details |
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FAQs on IEEE Transactions on Electron Devices
How long has IEEE Transactions on Electron Devices been actively publishing? 
IEEE Transactions on Electron Devices has been in operation since 1954 till date.
What is the publishing frequency of IEEE Transactions on Electron Devices?
IEEE Transactions on Electron Devices published with a Monthly frequency.
What is the eISSN & pISSN for IEEE Transactions on Electron Devices?
For IEEE Transactions on Electron Devices, eISSN is 1557-9646 and pISSN is 0018-9383.
What is Citescore for IEEE Transactions on Electron Devices?
Citescore for IEEE Transactions on Electron Devices is 5.3.
What is SNIP score for IEEE Transactions on Electron Devices?
SNIP score for IEEE Transactions on Electron Devices is 1.36.
Who is the publisher of IEEE Transactions on Electron Devices?
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC is the publisher of IEEE Transactions on Electron Devices.
